logo

MG1010 Datasheet, Microsemi

MG1010 diodes equivalent, gunn diodes.

MG1010 Avg. rating / M : 1.0 rating-11

datasheet Download

MG1010 Datasheet

Features and benefits


* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
  –95 GHz
* Low Phase Noise
* High Reliability Ap.

Application


* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* .

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1.

Image gallery

MG1010 Page 1 MG1010 Page 2 MG1010 Page 3

TAGS

MG1010
GUNN
Diodes
MG1011
MG1012
MG1013
Microsemi

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts