Description
and applications
Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.Electrical characteristics(1)
MBR3040FCT MBR3045FCT MBR3050FCT MBR3060FCT MBR3080FCT MBR3090FCT MBR30100FCT MBR30150FCT MBR30200FCT
Symbol
Parameter
Unit
VRRM
Max Peak Repetitive Reverse Voltage 40 45
VR(RMS)
Max RMS Re.
Features
- Plastic package with UL 94V-0 flammability classification.
- Flame retardant epoxy molding component.
- Guardring for overvoltage protection.
- Low power loss, high efficiency.
- RoHS compliant (2002/95/EC)
12 3
1
3
ITO-220AB
2.
