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KV2101 - VARACTOR DIODES

Download the KV2101 datasheet PDF. This datasheet also covers the KV2001 variant, as both devices belong to the same varactor diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor.

Key Features

  • Available as packaged devices or as chips for hybrid.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KV2001-Microsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
KV2101 Silicon Hyperabrupt Tuning Varactor Advanced Semiconductor
KV2101-150 Silicon Hyperabrupt Tuning Varactor Advanced Semiconductor
KV2101A Silicon Hyperabrupt Tuning Varactor Advanced Semiconductor
KV2111 (KV2111 - KV2161) VARACTOR DIODES Microwave Hyperabrupt Junction Microsemi Corporation
KV2113 ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES Microsemi Corporation

Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
KV2001 VARACTOR DIODES
KV2201 VARACTOR DIODES
KV2301 VARACTOR DIODES
KV2401 VARACTOR DIODES
KV2501 VARACTOR DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.MICROSEMI.com ® TM DESCRIPTION These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias.