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ICTE-45C - TRANSIENT VOLTAGE SUPPRESSOR

Download the ICTE-45C datasheet PDF. This datasheet also covers the ICTE-5 variant, as both devices belong to the same transient voltage suppressor family and are provided as variant models within a single manufacturer datasheet.

Description

The ICTE-5 through ICTE-45C series of Transient Voltage Suppressors (TVSs) are designed for the protection of integrated circuits that require very low Clamping Voltages (VC) during a transient threat.

Features

  • This series of TVS devices is designed to protect Bipolar, MOS and Schottky improved integrated circuits.
  • Transient protection for CMOS, MOS, Bipolar, ICS (TTL, ECL, DTL, RTL and linear functions).
  • 5.0 to 45 volts.
  • Low clamping ratio.
  • RoHS Compliant devices available by adding “e3” suffix.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ICTE-5-Microsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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ICTE-45C GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR MDE
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ICTE-45 Silicon Avalanche Diodes Littelfuse

Other Datasheets by Microsemi (Microchip)

Part Number Description
ICTE-45 TRANSIENT VOLTAGE SUPPRESSOR
ICTE-10 TRANSIENT VOLTAGE SUPPRESSOR
ICTE-10C TRANSIENT VOLTAGE SUPPRESSOR
ICTE-12 TRANSIENT VOLTAGE SUPPRESSOR
ICTE-12C TRANSIENT VOLTAGE SUPPRESSOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SCOTTSDALE DIVISION ICTE-5 thru ICTE-45C, e3 TRANSIENT VOLTAGE SUPPRESSOR WWW.Microsemi .COM DESCRIPTION The ICTE-5 through ICTE-45C series of Transient Voltage Suppressors (TVSs) are designed for the protection of integrated circuits that require very low Clamping Voltages (VC) during a transient threat. Due to their very fast response time, protection level and high Peak Pulse Power (PPP) capability, they are extremely effective in providing protection against line transients generated by: voltage reversals, capacitive or inductive load switching, electromechanical switching, electrostatic discharge and electromagnetic coupling. APPEARANCE IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.
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