GC4325 Datasheet | Microsemi

ESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 m A bias. These diodes have somewhat faster speeds as pared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. This series of diodes meets Ro HS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS The GC4300 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR witches, channel or antenna selection switches (telemunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4300 series are also used as passive and active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current @80% of Minimum Rated VB 0.5 u A Storage Temperature TSTG -65 to +200 ºC Operating Temperature -55 to +150 ºC GC4310 - GC4375 CONTROL DEVICES High Speed NIP Diodes Ro HS pliant KEY Features - Available as packaged devices or as chips for hybrid applications - Low...