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GC4320 - High Speed NIP Diodes

Download the GC4320 datasheet PDF (GC4310 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high speed nip diodes.

Description

The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material.

These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.

Features

  • Available as packaged devices or as chips for hybrid.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GC4310-Microsemi.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.MICROSEMI.com ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500.
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