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EDI88512CA-XMXG - 512Kx8 Plastic Monolithic SRAM CMOS

Description

I/O0-7 A0-18 WE# CS# OE# VCC VSS NC Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power (+5V ±10%) Ground Not Connected BLOCK DIAGRAM Memory Array Address Buffer Address Decoder I/O Circuits I/OØ-7 Microsemi Corporation (602) 437-1520 www.mi

Features

  •  512Kx8 bit CMOS Static.
  •  Random Access Memory.
  • Access Times of 17, 20, 25ns.
  • Data Retention Function (LPA version).
  • Extended Temperature Testing.
  • Data Retention Functionality Testing.
  •  36 lead JEDEC Approved Revolutionary Pinout.
  • Plastic SOJ (Package 319).
  •  Single +5V (±10%) Supply Operation.
  •  RoHS compliant WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic com.

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EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES  512Kx8 bit CMOS Static  Random Access Memory • Access Times of 17, 20, 25ns • Data Retention Function (LPA version) • Extended Temperature Testing • Data Retention Functionality Testing  36 lead JEDEC Approved Revolutionary Pinout • Plastic SOJ (Package 319)  Single +5V (±10%) Supply Operation  RoHS compliant WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device. Extended temperature testing is performed with the test patterns developed for use on WEDC’s fully compliant 512Kx8 SRAMs.
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