• GENERAL PURPOSE SILICON DIODES
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
VRM
V(pk)
80
180
250
270
80
180
250
VRWM
V(pk)
70
180
225
225
70
180
225
I O I O IFSM
TA=+150°C tp = 1/120 S
TA=25°C
mA mA
A
200 50
200 50
200 50
400 150
200 50
200 50
200 50
2
2
2
5
2
2
2
TYPE
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
VF(1)
V dc
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
IR1 at VRWM IR2 at VRM IR3 at VRWM
TA+25°C
TA+25°C
TA+150°C
nA dc
25
25
25
50
25
25
25
µA µA dc
100 5
100 5
100 5
50 25
100 5
100 5
100 5
CAP
@VR
=4V
pF
–
–
–
2.0
–
–
–
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
24 MILS
12 MILS
DESIGN DATA
METALLIZATION:
Top: (Anode)....................Al
Back: (Cathode)..............Au
AL THICKNESS ............25,000 Å Min
GOLD THICKNESS ........4,000 Å Min
CHIP THICKNESS ..................10 Mils
TOLERANCES: ALL
Dimensions ± 2 mils
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
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