ARF477FL Datasheet | Microsemi

mon Source Push-Pull Pair D G S S G S S D RF POWER MOSFET - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a mon source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz. - Specified 150 Volt, 65 MHz Characteristics: - Output Power = 400 Watts .. - High Performance Push-Pull RF Package. - High Voltage Breakdown and Large SOA for Superior Ruggedness. - Gain = 15d B (Class AB) - Efficiency = 50% min - Low Thermal Resistance. - Ro HS pliant All Ratings: TC = 25°C unless otherwise specified. Ratings 500 500 15 ±30 750 -55 to 175 300 Unit V A V W °C MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C (each device) Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1/gfa2 VGS(TH) VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 7.5A) Forward Transconductance Match Ratio (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 50m A) Gate Threshold Voltage Match (VDS = VGS, ID = 50m A) 3.5 0.9 3 5.6 Min 500 2.9 4 25 250 ±100 8 1.1 5 0.2 Volts Typ Max Unit V μA n A mhos Thermal Characteristics Symbol RθJC RθJHS Parameter Junction to Case Junction to Sink (High Efficiency Thermal Joint pound and Planar Heat Sink Surface.) Min Typ 0.18 0.30 Max 0.2 0.32 Unit °C/W 050-4952 A 5-2009 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling...