Power MOS 7® MOSFETs
CR 2A
CR 4A
- Low RDSon
- Low input and Miller capacitance
Q2 CR2B CR4B
Q4
- Low gate charge
G2 S2
NTC1
0/ VBU S
G4 S4
N T C2
- Avalanche energy rated - Very rugged.
Kelvin source for easy drive.
Very low stray inductance
- Symmetrical design
- Lead frames for power connections.
Internal thermistor for temperature monitoring.
High level of integration
G3 S3
VB US
S1 G1
G4 S4
0/VBUS
S2 G2.
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APTM100H45STG
Full bridge Series & parallel diodes MOSFET Power Module
VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C
Application
VBUS • Motor control
CR 1A
CR3A
• Switched Mode Power Supplies
Q1 CR1B CR3B
Q3
• Uninterruptible Power Supplies
Features
G1 S1
O UT1 OUT2
G3 S3
• Power MOS 7® MOSFETs
CR 2A
CR 4A
- Low RDSon
- Low input and Miller capacitance
Q2 CR2B CR4B
Q4
- Low gate charge
G2 S2
NTC1
0/ VBU S
G4 S4
N T C2
- Avalanche energy rated - Very rugged
• Kelvin source for easy drive • Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G3 S3
VB US
S1 G1
G4 S4
0/VBUS
S2 G2
OUT2
OUT1
NTC2 NTC1
Benefits • Outstanding performance at
APTM100H45STG Datasheet
