Datasheet4U Logo Datasheet4U.com

APTGL475U120DAG - Single switch

Key Features

  • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current G CK - Low switching losses.
  • Kelvin source for easy drive.
  • Very low stray inductance - Symmetrical design - M5 power connectors.
  • High level of integration.
  • AlN substrate for improved thermal performance Benefits.
  • Outstanding performance at high frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction to case thermal resistance.
  • Low profile.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
APTGF100A120T Phase leg NPT IGBT Power Module Advanced Power Technology
APTGF100A120TG Phase leg NPT IGBT Power Module Microsemi Corporation
APTGF100DA120T Boost chopper NPT IGBT Advanced Power Technology
APTGF100DA120TG Boost chopper NPT IGBT Power Module Microsemi Corporation
APTGF100DU120T Dual common source NPT IGBT Power Module Advanced Power Technology

Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
APTGL475U120D4G Single switch Trench + Field Stop IGBT4 Power Module
APTGL700U120D4G Single switch Trench + Field Stop IGBT4 Power Module
APTGLQ600A65T6G Phase leg High speed Trench + Field Stop IGBT4
APTGT150A120D1G IGBT
APTGT150A120G IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK Application E C  Zero Current Switching resonant mode Features  Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current G CK - Low switching losses  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - M5 power connectors  High level of integration  AlN substrate for improved thermal performance Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V IC Continuous Col