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APT66F60B2 - N-Channel FREDFET

Features

  • Fast switching with low EMI.
  • Low trr for high reliability.
  • Ultra low Crss for improved noise immunity.
  • Low gate charge.
  • Avalanche energy rated.
  • RoHS compliant.

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Other Datasheets by Microsemi (Microchip)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APT66F60B2 APT66F60L 600V, 70A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
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