APT47N60BC3 Datasheet | Microsemi

APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070Ω Super Junction MOSFET TO-247 D3PAK - Ultra Low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated - Extreme dv/dt Rated - Popular TO-247 or Surface Mount D3 package. - Ro HS pliant MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT47N60BC3_SC3(G) UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 600 47 141 ±20 ±30 417 3.33 Volts Amps Volts Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 1800 °C V/ns Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) 600 0.06 0.07 0.5 25 250 IGSS VGS(th) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7m...