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APT34N80B2C3 APT34N80LC3
800V 34A 0.145Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
T-MAX™
TO-264
• Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package www.DataSheet4U.com
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
All Ratings: TC = 25°C unless otherwise specified.
APT34N80B2C3_LC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
800 34 102 ±20 ±30 417 3.33 -55 to 150 300 50 17 0.
APT34N80B2C3 Datasheet
