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APT31N80JC3
800V 31A 0.145Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
S G D
S
SO
2 T-
27
• Ultra low RDS(ON) • Ultra Low Gate Charge, Qg • Popular SOT-227 Package
• Low Miller Capacitance
"UL Recognized"
• Avalanche Energy Rated • N-Channel Enhancement Mode
ISOTOP ®
D G S
www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
All Ratings: TC = 25°C unless otherwise specified.
APT31N80JC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
800 31 93 ±20 ±30 833 6.
APT31N80JC3 Datasheet
