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  Microsemi Electronic Components Datasheet  

APT30M60J Datasheet

N-Channel MOSFET

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APT30M60J
600V, 30A, 0.16Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
SS
G D SOT-227
"UL Recognized"
ISOTOP®
file # E145592
APT30M60J
Single die MOSFET
G
D
S
www.DataSheet4U.com
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
Ratings
30
19
160
±30
1200
21
Unit
A
V
mJ
A
Min
-55
2500
Typ
0.15
1.03
29.2
Max Unit
356 W
0.35 °C/W
150 °C
V
oz
g
10 in·lbf
1.1 N·m


  Microsemi Electronic Components Datasheet  

APT30M60J Datasheet

N-Channel MOSFET

No Preview Available !

Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
600
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 21A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 2.5mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Dynamic Characteristics
Symbol Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
www.DataSCheoses t4U.coOmutput Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 21A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 21A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 21A
RG = 4.7Ω 6 , VGG = 15V
Typ
0.57
0.14
4
-10
APT30M60J
Max Unit
V
V/°C
0.16 Ω
5V
mV/°C
100
500
µA
±100 nA
Typ Max Unit
42 S
5890
90
800
420 pF
220
215
45 nC
90
48
55 ns
145
44
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 21A, TJ = 25°C, VGS = 0V
ISD = 21A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 21A, di/dt ≤1000A/µs, VDD = 400V,
TJ = 125°C
Min
Typ Max Unit
100
A
200
1
700
15.2
V
ns
µC
8 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 5.44mH, RG = 4.7Ω, IAS = 21A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT30M60J
Description N-Channel MOSFET
Maker Microsemi
Total Page 4 Pages
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