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  Microsemi Electronic Components Datasheet  

APT22F80S Datasheet

N-Channel FREDFET

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APT22F80B
APT22F80S
800V, 23A, 0.43Ω Max, trr 260ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO-247
D3PAK
APT22F80B AP22F80S
Single die FREDFET G
www.DataSheet4U.com
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
D
S
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
23
15
85
±30
975
12
Unit
A
V
mJ
A
Min Typ Max Unit
625 W
0.20
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m


  Microsemi Electronic Components Datasheet  

APT22F80S Datasheet

N-Channel FREDFET

No Preview Available !

Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 12A
VGS = VDS, ID = 1mA
800
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 800V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT22F80B_S
Typ Max Unit
V
0.87 V/°C
0.40 0.43
Ω
45V
-10 mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
www.DataSCheoses t4U.coOmutput Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 12A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 533V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 12A,
VDS = 400V
Resistive Switching
VDD = 533V, ID = 12A
RG = 4.7Ω 6 , VGG = 15V
Typ
21
4595
80
455
215
105
150
25
75
26
38
115
33
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 12A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 12A 3
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD 12A, di/dt 1000A/µs, VDD = 400V,
TJ = 125°C
Min
Typ Max Unit
23
A
85
1.0
260
490
1.07
2.71
9.5
13.5
V
ns
µC
A
25 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 13.54mH, RG = 10Ω, IAS = 12A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = 1.46E-8/VDS^2 + 1.87E-8/VDS + 7.21E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT22F80S
Description N-Channel FREDFET
Maker Microsemi
Total Page 4 Pages
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