2N5671 - NPN HIGH POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N5671
Manufacturer	Microsemi (now Microchip Technology)
File Size	104.13 KB
Description	NPN HIGH POWER SILICON TRANSISTOR
Datasheet	2N5671 Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N5672	NPN HIGH POWER SILICON TRANSISTOR
2N5641	RF & Microwave Transistor
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2N5643	RF & Microwave Transistor
2N5683	NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC www.DataSheet.net/ 2N5671 90 120 2N5672 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range 7.0 10 30 6.0 140 -65 to +200 Max. 1.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.