| Part number | 2N3879 |
|---|---|
| Datasheet | 2N3879-Microsemi.pdf |
| File Size | 52.65 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
|
|
5.0 (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc V(BR)CEO Collector-Emitter Cutoff Current VCE = 50 Vdc ICEO Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc ICEX Collector-Base Cutoff Current VCB = 120 Vdc ICBO Emitter-Base Cutoff Current VEB = 7.0 Vdc IEBO Unit Vdc Vdc Vdc Adc Adc W 0C Unit 0C/.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3879 | Silicon NPN Power Transistors | SavantIC |
 |
2N3879 | NPN Transistor | INCHANGE |
 |
2N3879 | NPN Power Silicon Transistor | VPT |
 |
2N3879 | NPN POWER SILICON TRANSISTOR | Seme LAB |
 |
2N3879 | Power Transistors | RCA |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N3878 | NPN Transistor |
| 2N3814S | NPN MEDUIM POWER SILICON TRANSISTOR |
| 2N3849 | NPN Transistor |
| 2N3867S | Silicon PNP Power Transistors |
| 2N3868S | Silicon PNP Power Transistors |
| 2N3019 | LOW POWER NPN SILICON TRANSISTOR |
| 2N3019S | LOW POWER NPN SILICON TRANSISTOR |
| 2N3057A | LOW POWER NPN SILICON TRANSISTOR |
| 2N3419S | NPN MEDUIM POWER SILICON TRANSISTOR |
| 2N3420S | NPN MEDUIM POWER SILICON TRANSISTOR |
