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2N3507 - NPN MEDIUM POWER SILICON TRANSISTOR

Download the 2N3507 datasheet PDF. This datasheet also covers the 2N3506 variant, as both devices belong to the same npn medium power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage.

These devices are also available in TO-5 and low profile U4 packaging.

Features

  • JEDEC registered 2N3506 through 2N3507A series.
  • RoHS compliant versions available (commercial grade only).
  • VCR(sat) = 0.5 V @ IC = 500 mA.
  • Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
  • Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3506-Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3506 thru 2N3507A Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Qualified Levels: JAN, JANTX and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3506 through 2N3507A series. • RoHS compliant versions available (commercial grade only). • VCR(sat) = 0.5 V @ IC = 500 mA.
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