t VR = 100V, TC = +100°C VR = 150V, TC = +100°C VR = 200V, TC = +100°C Reverse Recovery Time IF = 1.0A, IR = 1A, IRR = 100mA Junction Capacitance VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max 1N6657, R.
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