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1N649-1 - Silicon Switching Diode

Key Features

  • 1N649-1.

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1N649-1 FEATURES • 1N649-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: Operating Current: Derating Factor: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C 150mA, TA= +150°C 2mA/°C above +25°C 6mA/°C above +150°C 600V DESIGN DATA Case: Hermetically sealed glass package per MILPRF-19500/240 DO-35 outline Lead Material: Copper clad steel Lead Finish: Tin/Lead Thermal Resistance (RθJL): 250°C/W maximum at L=.