Full PDF Text Transcription for 1N4150UR-1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N4150UR-1. For precise diagrams, and layout, please refer to the original PDF.
1N4150UR-1 FEATURES • 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG...
View more extracted text
ING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • ALSO AVAILABLE AS LL4150, CDLL4150, & MLL4150 MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1uS: Surge Current B, sine 1S: Total Power Dissipation: Operating Current: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 4.0A 0.5A 500mW 200mA, TA= +25°C to +110°C 3.1mA/°C above TEC= +110°C 50V DC ELECTRICAL CHARACTERISTICS VF IR Ambient IF (°C) mA Min Max Ambient Min Max Ambient V V (°C) V (dc) µA µA (°C) 25 1 .54 .62 25 50 - 0.1 25 25 10 .66 .74 150 50 - 100 25 50 .76 .
1N4150UR-1 Datasheet
