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MT51J256M32 - GDDR5 SGRAM

Features

  • GDDR5 SGRAM MT51J256M32.
  • 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Features.
  • VDD = VDDQ = 1.5V ±3% and 1.35V ±3%.
  • Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s.
  • 16 internal banks.
  • Four bank groups for tCCDL = 3 tCK.
  • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16.
  • Burst length (BL): 8 only.
  • Programmable CAS latency: 7.
  • 24.
  • Programmable WRITE latency: 4.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM MT51J256M32 – 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Features • VDD = VDDQ = 1.5V ±3% and 1.35V ±3% • Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.
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