MT48H8M32LF
Features
Mobile SDRAM
MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF
- 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site: .micron./products/dram/mobile
Features
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- Low voltage power supply Partial array self refresh power-saving mode Temperature pensated Self Refresh (TCSR) Deep power-down mode Programmable output drive strength Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst lengths: 1, 2, 4, 8, or full page Auto precharge, includes concurrent auto precharge, and auto refresh modes Self-refresh mode; standard and low power 64ms, 4,096-cycle refresh LVTTL-patible inputs and outputs mercial and industrial temperature ranges Supports CAS latency of 1, 2, 3
Options
- VDD/VDDQ
- 3.3V/3.3V
- 2.5V/2.5V
- 1.8V/1.8V
- Configurations
- 8 Meg x 32 (2 Meg x 32 x 4 banks)
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