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MT46H8M32LF - Mobile Low-Power DDR SDRAM

Download the MT46H8M32LF datasheet PDF. This datasheet also covers the MT46H16M16 variant, as both devices belong to the same mobile low-power ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

of products still under development.

PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev.

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Key Features

  • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Four internal banks for concurrent operation.
  • Data masks (DM) for masking write data.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT46H16M16_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT46H8M32LG Mobile DDR SDRAM
MT46H8M16LF Mobile Low-Power DDR SDRAM
MT46H128M16LF Mobile Low-Power DDR SDRAM
MT46H128M32L2 Mobile Low-Power DDR SDRAM
MT46H16M16LF Mobile Low-Power DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.