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MT46H8M16LF - Mobile Low-Power DDR SDRAM

General Description

of products still under development.

PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H8M16.fm - Rev.

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Key Features

  • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Four internal banks for concurrent operation.
  • Data masks (DM) for masking write data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • Four internal banks for concurrent operation • Data masks (DM) for masking write data–one mask per byte • Programmable burst lengths: 2, 4, or 8 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.