MT45W8MW16BGX
Key Features
- Single device supports asynchronous, page, and burst operations
- Vcc, VccQ Voltages 1.7V-1.95V Vcc 1.7V-1.95V VccQ
- Random Access Time: 70ns
- Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz
- Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
- Low Power Consumption Asynchronous READ: < 30mA Intrapage Read: < 15mA Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 40mA Continuous burst READ: < 25mA Standby: < 40µA (TYP at 25 °C) Deep power-down: < 3µA (TYP)
- Low-Power Features On-chip Temperature Compensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Options
- Configuration: 8 Meg x 16 VCC Core Voltage Supply: 1.8V VCCQ I/O Voltage Supply: 1.8V
- Package 54-ball VFBGA-”green”
- Timing 70ns access 85ns access Designator MT45W8MW16B
