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MT45W8MW16BGX

Manufacturer: Micron Technology
MT45W8MW16BGX datasheet preview

Datasheet Details

Part number MT45W8MW16BGX
Datasheet MT45W8MW16BGX_MicronTechnology.pdf
File Size 829.46 KB
Manufacturer Micron Technology
Description 8MEG X 16 Async/Page/Burst CellularRAM Memory
MT45W8MW16BGX page 2 MT45W8MW16BGX page 3

MT45W8MW16BGX Overview

.6 Part-Numbering Information. .9 Valid Part Number binations.

MT45W8MW16BGX Key Features

  • Single device supports asynchronous, page, and burst operations
  • Vcc, VccQ Voltages 1.7V-1.95V Vcc 1.7V-1.95V VccQ
  • Random Access Time: 70ns
  • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
  • Low-Power Features On-chip Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Opt
  • Configuration: 8 Meg x 16 VCC Core Voltage Supply: 1.8V VCCQ I/O Voltage Supply: 1.8V
  • Package 54-ball VFBGA-”green”
  • Timing 70ns access 85ns access Designator MT45W8MW16B
  • Frequency 66 MHz 80 MHz 104 MHz
  • Standby Power at 85°C Standard: 200µA (MAX) Low-power: 160µA (MAX)
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MT45W8MW16BGX Distributor

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