MT45W8MW16BGX - 8MEG X 16 Async/Page/Burst CellularRAM Memory

Micron Technology

Datasheet Details

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Single device supports asynchronous, page, and burst operations.
Vcc, VccQ Voltages 1.7V.
1.95V Vcc 1.7V.
1.95V VccQ.
Random Access Time: 70ns.
Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz.
Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage.

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Micron Technology MT45W8MW16BGX-like datasheet

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