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MT2LDT832H - (MT2LDT432H / MT2LDT832H) SMALL-OUTLINE DRAM MODULE

Download the MT2LDT832H datasheet PDF (MT2LDT432H included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for (mt2ldt432h / mt2ldt832h) small-outline dram module.

Description

The MT2LDT432H (X)(S) and MT4LDT832H (X)(S) are randomly accessed 16MB and 32MB memories organized in a small-outline x32 configuration.

They are specially processed to operate from 3V to 3.6V for low-voltage memory systems.

Features

  • JEDEC pinout in a 72-pin, small-outline, dual inline memory module (SODIMM).
  • 16MB (4 Meg x 32) and 32MB (8 Meg x 32).
  • High-performance CMOS silicon-gate process.
  • Single +3.3V ±0.3V power supply.
  • All inputs, outputs and clocks are TTL-compatible.
  • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms.
  • FAST PAGE MODE (FPM) or Extended Data-Out (EDO) PAGE MODE access cycles.
  • Optional self refresh (S) for low-power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT2LDT432H_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com ADVANCE 4, 8 MEG x 32 DRAM SODIMMs SMALL-OUTLINE DRAM MODULE FEATURES • JEDEC pinout in a 72-pin, small-outline, dual inline memory module (SODIMM) • 16MB (4 Meg x 32) and 32MB (8 Meg x 32) • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and clocks are TTL-compatible • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms • FAST PAGE MODE (FPM) or Extended Data-Out (EDO) PAGE MODE access cycles • Optional self refresh (S) for low-power data retention MT2LDT432H (X)(S), MT4LDT832H (X)(S) For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.
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