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MT29F1G08ABB - (MT29F1GxxABB) 1Gb NAND Flash Memory

This page provides the datasheet information for the MT29F1G08ABB, a member of the MT29F1G16ABB (MT29F1GxxABB) 1Gb NAND Flash Memory family.

Datasheet Summary

Description

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Features

  • 1Gb NAND Flash Memory MT29F1GxxABB For the latest data sheet, refer to Micron's Web site: www. micron. com/datasheets Features.
  • Organization.
  • Page size x8: 2,112 bytes (2,048 + 64 bytes).
  • Page size x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 1Gb: 1,024 blocks.
  • READ performance.
  • Random READ: 25µs (MAX).
  • Sequential READ: 50ns (MIN).
  • WRITE performance.

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Datasheet Details

Part number MT29F1G08ABB
Manufacturer Micron Technology
File Size 1.95 MB
Description (MT29F1GxxABB) 1Gb NAND Flash Memory
Datasheet download datasheet MT29F1G08ABB Datasheet
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www.DataSheet4U.com Micron Confidential and Proprietary Advance‡ 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1GxxABB For the latest data sheet, refer to Micron's Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 1Gb: 1,024 blocks • READ performance • Random READ: 25µs (MAX) • Sequential READ: 50ns (MIN) • WRITE performance • PROGRAM PAGE: 300µs (TYP) • BLOCK ERASE: 2.0ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • Data retention: 10 years • The first block (block address 00h) is guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles). • VCC: 1.65V–1.
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