MT28F160C34 - FLASH MEMORY

Datasheet Summary

Description

Table.

See last page for mechanical drawing.

The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).

Features

MT28F160C34.
Thirty-nine erase blocks: BALL.

Micron Technology

📥 Download Datasheet

Datasheet Details

Part number	MT28F160C34
Manufacturer	Micron Technology
File Size	692.02 KB
Description	FLASH MEMORY
Datasheet	MT28F160C34 Datasheet
Additional preview pages of the MT28F160C34 datasheet.

📁 Similar Datasheet

MT2833S5 - 30V Power MOSFET (MT Semiconductor)
MT28C3212P2 - FLASH AND SRAM COMBO MEMORY (MICRON)
MT28GU01GAAA1EGC-0SIT - StrataFlash Embedded Memory (MICRON)
MT28GU01GAAA2EGC-0SIT - StrataFlash Embedded Memory (MICRON)
MT28GU256AAA1EGC-0SIT - StrataFlash Embedded Memory (MICRON)
MT28GU256AAA2EGC-0SIT - StrataFlash Embedded Memory (MICRON)
MT28GU512AAA1EGC-0SIT - StrataFlash Embedded Memory (MICRON)
MT28GU512AAA2EGC-0SIT - StrataFlash Embedded Memory (MICRON)
MT28N20A - N-CHANNEL MOSFET (JILIN SINO)
MT2 - Relay (Tyco Electronics)

Other Datasheets by Micron Technology

MT28F160C3 - FLASH MEMORY
MT28F160A3 - FLASH MEMORY
MT28F1284W18 - 1.8V Low Voltage Extended Temperature
MT28F128J3 - Q-FLASH MEMORY
MT28F002B3 - FLASH MEMORY
MT28F002B5 - FLASH MEMORY
MT28F004B3 - FLASH MEMORY
MT28F004B5 - SMART 5 BOOT BLOCK FLASH MEMORY

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES MT28F160C34 • Thirty-nine erase blocks: BALL ASSIGNMENT (Top View) Eight 4K-word parameter blocks 46-Ball FBGA Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V–3.465V and 12V VPP 1 2 3 4 5 6 7 8 • Address access times: WP# A13 V A19 A4 A8 A11 A7 A 90ns at 3.

Published: Oct 1, 2006 |