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Micron Technology

MT28F160C34 Datasheet Preview

MT28F160C34 Datasheet

FLASH MEMORY

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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F160C34
FEATURES
• Thirty-nine erase blocks:
Eight 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
BALL ASSIGNMENT (Top View)
46-Ball FBGA
• VCC, VCCQ and VPP voltages:
3.3V ±5% VCC
3.3V ±5% VCCQ
1.65V–3.465V and 12V VPP
• Address access times:
90ns at 3.3V ±5%
12345678
A
A13 A11
A8
VPP WP# A19
A7
A4
• Low power consumption:
Standby and deep power-down mode < 1µA
B
A14 A10 WE# RP# A18 A17
A5
A2
(typical ICC)
Automatic power saving feature (APS mode)
C A15 A12 A9
A6 A3 A1
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
• 128-bit OTP area for security purposes
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE# A0
• Industry-standard command set compatibility
• Software/hardware block protection
DataSheet4U.coEm VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0 VSS
DataShee
OPTIONS
• Timing
90ns access
• Boot Block Starting Address
Top (FFFFFh)
Bottom (00000h)
• Package
46-ball FBGA (6 x 8 ball grid)
• Temperature Range
Extended (-40ºC to +85ºC)
NUMBER
-9
T
B
FD
ET
Part Number Example:
MT28F160C34FD-9 TET
GENERAL DESCRIPTION
The MT28F160C34 is a nonvolatile, electrically block-
erasable (flash), programmable memory containing
16,777,216 bits organized as 1,048,576 words (16 bits).
The MT28F160C34 is manufactured on 0.22µm process
technology in a 46-ball FBGA package.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
F VSS DQ7 DQ13 DQ4 VCC DQ10 DQ1 OE#
(Ball Down)
NOTE: See page 3 for Ball Description Table.
See last page for mechanical drawing.
WSM status can be monitored by an on-chip status reg-
ister to determine the progress of program/erase tasks.
The device is equipped with 128 bits of one time
programmable (OTP) area. The soft protection feature
for blocks will mark them as read-only by configuring soft
protection registers with command sequences.
ARCHITECTURE
The MT28F160C34 flash contains eight 4K-word
parameter blocks and thirty-one 32K-word blocks.
Memory is organized by using a blocked architecture to
allow independent erasure of selected memory blocks.
Any address within a block address range selects that
block for the required READ, WRITE, or ERASE operation
(see Figure 1).
DataSheet4U.com1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE
BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
DataSheet4 U .com




Micron Technology

MT28F160C34 Datasheet Preview

MT28F160C34 Datasheet

FLASH MEMORY

No Preview Available !

www.DataSheet4U.com
ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
DEVICE MARKING
Due to the size of the package, Micron’s standard part
number is not printed on the top of each device. Instead,
an abbreviated device mark comprised of a five-digit
alphanumeric code is used. The abbreviated device mark
is cross referenced to the Micron part numbers in
Table 1.
Table 1
Cross Reference for Abbreviated
Device Marks
PART NUMBER
MT28F160C34FD-9 TET
MT28F160C34FD-9 BET
PRODUCT
MARKING
FW614
FW615
SAMPLE
MARKING
FX614
FX615
et4U.com
RP#
CE#
WE#
OE#
A0–A19
DQ0–DQ15
Data Input
Buffer
CSM
FUNCTIONAL BLOCK DIAGRAM
Data
Register
X DEC
Y/Z DEC
Bank a Blocks
Y/Z Gating/Sensing
ID
Reg.
Status
Reg.
WSM
I/O Logic
Program/
Erase Change
Pump Voltage
Switch
DataSheet4U.com
Address
Input
Buffer
APS
Control
Address
CNT WSM
Address Latch
Address
Multiplexer
Y/Z DEC
X DEC
Output
Multiplexer
Data
Comparator
Y/Z Gating/Sensing
Bank b Blocks
DataShee
DQ0–DQ15
Output
Buffer
DataSheet4U.com
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
DataSheet4 U .com
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.


Part Number MT28F160C34
Description FLASH MEMORY
Maker Micron Technology
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MT28F160C34 Datasheet PDF






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