MT28F008B3
Overview
MT28F008B3 MT28F800B3 T B None ET VG WG SG The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC.
- Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
- Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1
- Compatible with 0.3µm Smart 3 device
- Advanced 0.18µm CMOS floating-gate process
- Address access time: 90ns
- 100,000 ERASE cycles
- Industry-standard pinouts
- Inputs and outputs are fully TTL-compatible
- Automated write and erase algorithm
- Two-cycle WRITE/ERASE sequence
