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Micron Technology

MT28F004B3 Datasheet Preview

MT28F004B3 Datasheet

(MT28F004B3 / MT28F400B3) FLASH MEMORY

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FLASH MEMORY
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
40-Pin TSOP Type I 48-Pin TSOP Type I
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10% VPP application/production programming1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
44-Pin SOP
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
DataSheet4U.com
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
DataShee
OPTIONS
• Timing
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
44-pin SOP (MT28F400B3)
48-pin TSOP Type I (MT28F400B3)
40-pin TSOP Type I (MT28F004B3)
MARKING
-8
MT28F004B3
MT28F400B3
T
B
None
ET
SG
WG
VG
NOTE:
1. This generation of devices does not support 12V VPP
compatibility production programming; however, 5V VPP
application production programming can be used with no
loss of performance.
DataSheet4U.com
Part Number Example:
MT28F400B3SG-8 T
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable memory devices containing 4,194,304 bits
organized as 262,144 words (16 bits) or 524,288 bytes (8
bits). Writing or erasing the device is done with either a
3.3V or 5V VPP voltage, while all operations are performed
with a 3.3V VCC. Due to process technology advances,
5V VPP is optimal for application and production pro-
gramming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal write
or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
DataSheet4 U .com




Micron Technology

MT28F004B3 Datasheet Preview

MT28F004B3 Datasheet

(MT28F004B3 / MT28F400B3) FLASH MEMORY

No Preview Available !

www.DataSheet4U.com
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
VPP
WP#
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
et4U.com
PIN ASSIGNMENT (Top View)
48-PIN TSOP TYPE I
44-PIN SOP
1 48 A16
2 47 BYTE#
3 46 VSS
4 45 DQ15/(A-1)
5 44 DQ7
6 43 DQ14
7 42 DQ6
8 41 DQ13
9 40 DQ5
10 39 DQ12
11 38 DQ4
12 37 VCC
13 36 DQ11
14 35 DQ3
15 34 DQ10
16 33 DQ2
17 32 DQ9
18 31 DQ1
19 30 DQ8
20 29 DQ0
21 28 OE#
22 27 VSS
23 26 CE#
24 25 A0
ORDER NUMBER AND PART MARKING
MT28F400B3WG-8 B
MT28F400B3WG-8 T
MT28F400B3WG-8 BET
MT28F400B3WG-8 TET
DataSheet4U.com
VPP
WP#
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 RP#
43 WE#
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE#
32 VSS
31 DQ15/(A-1)
30 DQ7
29 DQ14
28 DQ6
27 DQ13
26 DQ5
25 DQ12
24 DQ4
23 VCC
ORDER NUMBER AND PART MARKING
MT28F400B3SG-8 B
MT28F400B3SG-8 T
MT28F400B3SG-8 BET
MT28F400B3SG-8 TET
DataShee
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
40-PIN TSOP TYPE I
1 40
2 39
3 38
4 37
5 36
6 35
7 34
8 33
9 32
10 31
11 30
12 29
13 28
14 27
15 26
16 25
17 24
18 23
19 22
20 21
A17
VSS
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
DataSheet4U.com
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
DataSheet4 U .com
ORDER NUMBER AND PART MARKING
MT28F004B3VG-8 B
MT28F004B3VG-8 T
MT28F004B3VG-8 BET
MT28F004B3VG-8 TET
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.


Part Number MT28F004B3
Description (MT28F004B3 / MT28F400B3) FLASH MEMORY
Maker Micron Technology
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MT28F004B3 Datasheet PDF






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