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FLASH MEMORY
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F002B3
MT28F200B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Five erase blocks:
40-Pin TSOP Type I 48-Pin TSOP Type I
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Two main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10% VPP application/production
programming
12V ±5% VPP compatibility production
44-Pin SOP
programming
• Address access times: 90ns, 100ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
DataShee
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
DataSheet4U.com
(MT28F200B3, 128K x 16/256K x 8)
• Byte-wide READ and WRITE only
(MT28F002B3, 256K x 8)
• TSOP and SOP packaging options
GENERAL DESCRIPTION
The MT28F002B3 (x8) and MT28F200B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable, read-only memories containing 2,097,152
OPTIONS
MARKING
bits organized as 131,072 words (16 bits) or 262,144
• Timing
bytes (8 bits). Writing or erasing the device is done with
90ns access
-9 either a 3.3V or 5V VPP voltage, while all operations are
100ns access
-10 ET
performed with a 3.3V VCC. Due to process technology
• Configurations
256K x 8
128K x 16/256K x 8
• Boot Block Starting Word Address
Top (1FFFFH)
Bottom (00000H)
MT28F002B3
MT28F200B3
T
B
advances, 5V VPP is optimal for application and produc-
tion programming. For backward compatibility with
SmartVoltage technology, 12V VPP is supported for a
maximum of 100 cycles and may be connected for up
to 100 cumulative hours. These devices are fabricated
with Micron’s advanced CMOS floating-gate process.
The MT28F002B3 and MT28F200B3 are organized
• Operating Temperature Range
into five separately erasable blocks. To ensure that
Commercial (0°C to +70°C)
None
critical firmware is protected from accidental erasure or
Extended (-40°C to +85°C)
ET overwrite, the devices feature a hardware-protected
• Packages
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type 1
(12mm x 20mm)
Plastic 40-pin TSOP
(10mm x 20mm)
boot block. Writing or erasing the boot block requires
SG either applying a super-voltage to the RP# pin or driv-
WG ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to store
VG code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Part Number Example:
Please refer to Micron’s Web site (www.micron.com/
DataSheet4U.com
MT28F200B3SG-9 T
flash/htmls/datasheets.html) for the latest data sheet.
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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