MT16VDDF12864H
MT16VDDF12864H is SMALL-OUTLINE DDR SDRAM DIMM manufactured by Micron Technology.
Features
- 200-pin, small-outline, dual in-line memory module (SODIMM)
- Fast data transfer rates: PC1600, PC2100, and PC2700 ..
- Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM ponents
- 512MB (64 Meg x 64), 1GB (128 Meg x 64)
- VDD = VDDQ = +2.5V
- VDDSPD = +2.3V to +3.6V
- 2.5V I/O (SSTL_2 patible)
- mands entered on each positive CK edge
- DQS edge-aligned with data for READs; centeraligned with data for WRITEs
- Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
- Bidirectional data strobe (DQS) transmitted/ received with data- i.e., source-synchronous data capture
- Differential clock inputs CK and CK#
- Four internal device banks for concurrent operation
- Programmable burst lengths: 2, 4, or 8
- Auto precharge option
- Auto Refresh and Self Refresh Modes
- 7.8125µs maximum average periodic refresh interval
- Serial Presence Detect (SPD) with EEPROM
- Programmable READ CAS latency
- Gold edge contacts
MT16VDDF6464H
- 512MB MT16VDDF12864H
- 1GB
For the latest data sheet, please refer to the MicronâWeb site: .micron./moduleds
Figure 1: 200-Pin SODIMM (MO-224)
512MB Module
1GB Module
OPTIONS
MARKING G
- Package 200-pin SODIMM (standard) 200-pin SODIMM (lead-free)1
- Frequency/CAS Latency2 167 MHz (333 MT/s) CL = 2.5 133 MHz (266 MT/s) CL = 2 133 MHz (266 MT/s) CL = 2 133 MHz (266 MT/s) CL = 2.5 100 MHz (200 MT/s) CL = 2
NOTE:
Y -335 -262
-26A -265 -202
1. Contact factory for availability of lead-free products. 2. CL = CAS (READ) latency.
Table 1:
Address Table
512MB 1GB 8K 8K (A0- A12) 4 (BA0, BA1) 64 Meg x 8 2K (A0- A9, A11) 2 (S0#, S1#) 8K 8K (A0- A12) 4 (BA0, BA1) 32 Meg x 8 1K (A0- A9) 2 (S0#, S1#)
Refresh Count Device Row Addressing Device Bank Addressing Device Configuration Device Column Addressing Module Rank...
