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MT45W4MW16BFB Datasheet

Burst Cellularram Memory

Manufacturer: Micron Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

MT45W4MW16BFB Overview

ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM.

MT45W4MW16BFB Key Features

  • Single device supports asynchronous, page, and burst operations
  • VCC, VCCQ Voltages 1.70V-1.95V VCC 1.70V-2.25V VCCQ (Option W)
  • Random Access Time: 70ns
  • Burst Mode Write Access Continuous burst
  • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
  • Low-Power Features Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode
  • VCC Core Voltage Supply: 1.80V
  • MT45WxMx16BFB
  • VCCQ I/O Voltage 3.0V
  • MT45WxML16BFB 2.5V

More Datasheets from Micron Semiconductor

Part Number Description
MT45W4MW16B Burst Cellularram Memory
MT45W4MW16PFA Async Cellularram Memory
MT45W4ML16PFA Async Cellularram Memory
MT45W4MV16PFA Async Cellularram Memory
MT45W2ML16PFA Async Cellularram Memory
MT45W2MV16PFA Async Cellularram Memory
MT45W2MW16B Burst Cellularram Memory
MT45W2MW16BFB Burst Cellularram Memory
MT45W2MW16PFA Async Cellularram Memory

MT45W4MW16BFB Distributor