Datasheet4U Logo Datasheet4U.com

MT45W2MW16BFB (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory

MT45W2MW16BFB Description

www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM .
, and Figure 40 on page 50 for 54-ball mechanical drawing. Configuration: 4 Meg x 16 2 Meg x 16. Package 54-bal.

MT45W2MW16BFB Features

* Single device supports asynchronous, page, and burst operations
* VCC, VCCQ Voltages 1.70V
* 1.95V VCC 1.70V
* 2.25V VCCQ (Option W)
* Random Access Time: 70ns
* Burst Mode Write Access Continuous burst
* Burst Mode Read Access 4, 8, or 16 words,

📥 Download Datasheet

Preview of MT45W2MW16BFB PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MT45W8MW16BGX - 8MEG X 16 Async/Page/Burst CellularRAM Memory (Micron Technology)
  • MT4505 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
  • MT4506 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
  • MT4507 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
  • MT4550 - 40V Power MOSFET (MT Semiconductor)
  • MT4599C - P & N-Channel 60-V(D-S) MOSFET (Matrix Microtech)
  • MT4067-P - 256K x 1 DRAM (Micron)
  • MT40A1G16 - 1.2V DDR4 SDRAM (Micron)

📌 All Tags

MT45W2MW16BFB MT45W4MW16BFB Burst Cellularram Memory Micron Semiconductor
Micron Semiconductor MT45W2MW16BFB-like datasheet