MT45W2MW16BFB - (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory

Micron Semiconductor

The MT45W2MW16BFB by Micron Semiconductor is a (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory. Below is the official datasheet preview.

📥 Download Datasheet

MT45W2MW16BFB (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory by Micron Semiconductor - Datasheet Preview — Official preview page of the **MT45W2MW16BFB** (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory datasheet (Micron Semiconductor).

Datasheet Details

Part number	MT45W2MW16BFB
Manufacturer	MicrON Semiconductor
File Size	792.67 KB
Description	(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
Datasheet	MT45W2MW16BFB_MicronSemiconductor.pdf
Additional preview pages of the MT45W2MW16BFB datasheet.

MT45W2MW16BFB Product details

Description

, and Figure 40 on page 50 for 54-ball mechanical drawing. Configuration: 4 Meg x 16 2 Meg x 16 Package 54-ball FBGA Operating Temperature Range Wireless (-25°C to +85°C) Industrial (-40°C to +85°C) NOTE: Marking MT45W4Mx16BFB MT45W2Mx16BFB FB WT IT (contact factory) A part marking guide for the FBGA devices can be found on Micron’s Web site: www.micron.com/numberguide Part Number Example: MT45W2MW16BFB-701WT 1 ©2003 Micron Technology, Inc.

Features

Single device supports asynchronous, page, and burst operations.
VCC, VCCQ Voltages 1.70V.
1.95V VCC 1.70V.
2.25V VCCQ (Option W).
Random Access Time: 70ns.
Burst Mode Write Access Continuous burst.
Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz.
Page Mode Read Access Sixteen-word page size Interpage r.

📁 MT45W2MW16BFB Similar Datasheet

MT45W8MW16BGX - 8MEG X 16 Async/Page/Burst CellularRAM Memory (Micron Technology)
MT4505 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
MT4506 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
MT4507 - High Performance Ratiometric Linear Hall Effect Sensor (Magn Tek)
MT4550 - 40V Power MOSFET (MT Semiconductor)
MT4599C - P & N-Channel 60-V(D-S) MOSFET (Matrix Microtech)
MT4067-P - 256K x 1 DRAM (Micron)
MT40A1G16 - 1.2V DDR4 SDRAM (Micron)

Other Datasheets by Micron Semiconductor

MT45W2MW16B - (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
MT45W2MW16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W2ML16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W2MV16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W4ML16PFA - (MT45WxMx16PFA) Async Cellularram Memory
MT45W4MV16PFA - (MT45WxMx16PFA) Async Cellularram Memory

Published: Apr 7, 2008 |