MT45W2MW16B - (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory

Micron Semiconductor

MT45W2MW16B Datasheet Preview — Preview of MT45W2MW16B PDF

Datasheet Details

Part number	MT45W2MW16B
Manufacturer	MicrON Semiconductor ↗
File Size	792.56 KB
Description	(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
Datasheet	MT45W2MW16B_MicronSemiconductor.pdf

MT45W2MW16B Product details

Description

, and Figure 40 on page 50 for 54-ball mechanical drawing. Configuration: 4 Meg x 16 2 Meg x 16 Package 54-ball FBGA Operating Temperature Range Wireless (-25°C to +85°C) Industrial (-40°C to +85°C) NOTE: Marking MT45W4Mx16BFB MT45W2Mx16BFB FB WT IT (contact factory) A part marking guide for the FBGA devices can be found on Micron’s Web site: www.micron.com/numberguide Part Number Example: MT45W2MW16BFB-701WT 1 ©2003 Micron Technology, Inc.

Features

Single device supports asynchronous, page, and burst operations.
VCC, VCCQ Voltages 1.70V.
1.95V VCC 1.70V.
2.25V VCCQ (Option W).
Random Access Time: 70ns.
Burst Mode Write Access Continuous burst.
Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz.
Page Mode Read Access Sixteen-word page size Interpage r.

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Other Datasheets by Micron Semiconductor

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Published: Apr 7, 2008 |