• Part: MT45W2MV16PFA
  • Manufacturer: Micron Semiconductor
  • Size: 323.74 KB
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MT45W2MV16PFA Description

Micron CellularRAM products are high-speed, CMOS dynamic random access memories that have been developed for low-power portable applications. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or Pseudo SRAM offerings. Operating voltages have been reduced in an effort to minimize power consumption.

MT45W2MV16PFA Key Features

  • Asynchronous and Page Mode interface
  • Random Access Time: 70ns, 85ns
  • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns Intrapage read access: 20ns, 25ns
  • Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Standby: 90µA (32Mb), 100µA (64Mb) Deep Power-Down
  • Low-Power Features Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode
  • VCC Core Voltage Supply 1.8V
  • MT45WxMx16PFA
  • VCCQ I/O Voltage 3.0V
  • MT45WxML16PFA 2.5V
  • MT45WxMV16PFA 1.8V