PZ28F064M29EWLA
Features
Parallel NOR Flash Embedded Memory
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VCCQ = 1.65- 3.6V (I/O buffers)
- Asynchronous random or page read
- Page size: 8 words or 16 bytes
- Page access: 25ns
- Random access: 60ns (BGA); 70ns (TSOP)
- Buffer program: 256-word MAX program buffer
- Program time
- 0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH)
- 0.31µs per byte (3.2 MB/s TYP when using 256word buffer size in buffer program with V PPH)
- Memory organization
- 32Mb: 64 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 63 main blocks, 64KB each
- 64Mb: 128 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 127 main blocks, 64 KB each
- 128Mb: 128 main blocks, 128KB each
- Program/erase controller
- Embedded byte/word...
