PZ28F064M29EWBX
Key Features
- Supply voltage - VCC = 2.7-3.6V (program, erase, read) - VCCQ = 1.65-3.6V (I/O buffers)
- Asynchronous random or page read - Page size: 8 words or 16 bytes - Page access: 25ns - Random access: 60ns (BGA); 70ns (TSOP)
- Buffer program: 256-word MAX program buffer
- Program time - 0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH) - 0.31µs per byte (3.2 MB/s TYP when using 256word buffer size in buffer program with V PPH)
- Memory organization - 32Mb: 64 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 63 main blocks, 64KB each - 64Mb: 128 main blocks, 64KB each, or eight 8KB boot blocks (top or bottom) and 127 main blocks, 64 KB each - 128Mb: 128 main blocks, 128KB each
- Program/erase controller - Embedded byte/word program algorithms
- Program/erase suspend and resume capability - READ operation on any block during a PROGRAM SUSPEND operation - READ or PROGRAM operation on one block during an ERASE SUSPEND operation on another block
- BLANK CHECK operation to verify an erased block
- Unlock bypass, block erase, chip erase, and write to buffer capability - Fast buffered/batch programming - Fast block and chip erase
- VPP/WP# pin protection - VPPH voltage on V PP to accelerate programming performance - Protects highest/lowest block (H/L uniform) or top/bottom two blocks (T/B boot)
