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PZ28F032M29EWHA - Parallel NOR Flash Embedded Memory

Download the PZ28F032M29EWHA datasheet PDF. This datasheet also covers the PZ28F032M29EWXX variant, as both devices belong to the same parallel nor flash embedded memory family and are provided as variant models within a single manufacturer datasheet.

General Description

8 Signal Assignments 9 Signal Descriptions 13 Memory Organization 14 Memory Configuration 14 Memory Map 32Mb 15 Memory Map 64Mb 17 Memory Map 128Mb 19 Bus Operations 20 Read 20 Write 20 Standby 20 Output Disable 21 Reset 21 Registers 22 Status Register 2

Key Features

  • Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • Asynchronous random or page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25ns.
  • Random access: 60ns (BGA); 70ns (TSOP).
  • Buff.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PZ28F032M29EWXX-Micron.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
PZ28F032M29EWBA Parallel NOR Flash Embedded Memory
PZ28F032M29EWBB Parallel NOR Flash Embedded Memory
PZ28F032M29EWLA Parallel NOR Flash Embedded Memory
PZ28F032M29EWTA Parallel NOR Flash Embedded Memory
PZ28F032M29EWXX Parallel NOR Flash Embedded Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) • Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP) • Buffer program: 256-word MAX program buffer • Program time – 0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH) – 0.31µs per byte (3.