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PZ28F032M29EWBB Datasheet Preview

PZ28F032M29EWBB Datasheet

Parallel NOR Flash Embedded Memory

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX
PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX
JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX
Features
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
• Asynchronous random or page read
– Page size: 8 words or 16 bytes
– Page access: 25ns
– Random access: 60ns (BGA); 70ns (TSOP)
• Buffer program: 256-word MAX program buffer
• Program time
– 0.56µs per byte (1.8 MB/s TYP when using 256-
word buffer size in buffer program without VPPH)
– 0.31µs per byte (3.2 MB/s TYP when using 256-
word buffer size in buffer program with VPPH)
• Memory organization
– 32Mb: 64 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 63 main blocks,
64KB each
– 64Mb: 128 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 127 main blocks,
64 KB each
– 128Mb: 128 main blocks, 128KB each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– READ operation on any block during a PRO-
GRAM SUSPEND operation
– READ or PROGRAM operation on one block dur-
ing an ERASE SUSPEND operation on another
block
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block and chip erase
• VPP/WP# pin protection
– VPPH voltage on VPP to accelerate programming
performance
– Protects highest/lowest block (H/L uniform) or
top/bottom two blocks (T/B boot)
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent secure
identification
– Program or lock implemented at the factory or by
the customer
• Low-power consumption: Standby mode
• JESD47H-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm single-bit cell process technology
• Packages (JEDEC-standard)
– 56-pin TSOP (128Mb, 64Mb)
– 48-pin TSOP (64Mb, 32Mb)
– 64-ball FBGA (128Mb, 64Mb)
– 48-ball BGA (64Mb, 32Mb)
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
http://www.Datasheet4U.com




Micron

PZ28F032M29EWBB Datasheet Preview

PZ28F032M29EWBB Datasheet

Parallel NOR Flash Embedded Memory

No Preview Available !

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
This product is available with the prelocked extended memory block. Devices are shipped from the factory with
memory content bits erased to 1. For a list of available options, such as packages or high/low protection, or for
further information, contact your Micron sales representative.
Table 1: Part Number Information
Part Number
Category
Package
Product designator
Density
Device type
Device function
Features
Category Details
JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant
PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant
RC = 64-ball Fortified BGA, 11mm x 13mm, leaded
JR = 48-pin TSOP, 12mm x 20mm, lead-free, halogen-free, RoHS-compliant
PZ = 48-ball BGA, 6mm x 8mm, lead-free, halogen-free, RoHS-compliant
28F = Parallel NOR interface
128 = 128Mb
064 = 64Mb
032 = 32Mb
M29EW = Embedded Flash memory (3V core, page read)
H = Highest block protected by VPP/WP#; uniform block
L = Lowest block protected by VPP/WP#; uniform block
B = Bottom boot; bottom two blocks protected by VPP/WP#
T = Top boot; top two blocks protected by VPP/WP#
A/B/F/X or an asterisk (*) = Combination of features, including packing media, security features,
and specific customer request information
Valid M29EW Part Number Combinations
Table 2: Standard Part Numbers by Density, Medium, and Package
Package
JS PC RC JR PZ
32Mb Tray
– JR28F032M29EWHA PZ28F032M29EWHA
JR28F032M29EWLA PZ28F032M29EWLA
JR28F032M29EWBA PZ28F032M29EWBA
JR28F032M29EWTA PZ28F032M29EWTA
Tape
– JR28F032M29EWBB PZ28F032M29EWBB
and JR28F032M29EWTB
reel
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.


Part Number PZ28F032M29EWBB
Description Parallel NOR Flash Embedded Memory
Maker Micron
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