PZ28F032M29EWBB
Key Features
- Parallel NOR Flash Embedded Memory
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers)
- Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP)
- Buffer program: 256-word MAX program buffer
- Program/erase controller – Embedded byte/word program algorithms
- BLANK CHECK operation to verify an erased block
- Unlock bypass, block erase, chip erase, and write to buffer capability – Fast buffered/batch programming – Fast block and chip erase
- Software protection – Volatile protection – Nonvolatile protection – Password protection – Password access
- Low-power consumption: Standby mode
- JESD47H-pliant – 100,000 minimum ERASE cycles per block – Data retention: 20 years (TYP)
