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PC28F256P30TFE - Parallel NOR Flash Embedded Memory

Download the PC28F256P30TFE datasheet PDF. This datasheet also covers the PC28F256P30BFE variant, as both devices belong to the same parallel nor flash embedded memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features.
  • High performance.
  • 100ns initial access for Easy BGA.
  • 110ns initial access for TSOP.
  • 25ns 16-word asychronous page read mode.
  • 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode.
  • 4-, 8-, 16-, and continuous wor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PC28F256P30BFE-Micron.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256Mb and 512Mb (256Mb/256Mb), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • High performance – 100ns initial access for Easy BGA – 110ns initial access for TSOP – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 1.8V buffered programming at 1.
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