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NP8P128AE3BSM60E - P8P Parallel Phase Change Memory

Download the NP8P128AE3BSM60E datasheet PDF (NP8P128A13BSM60E included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for p8p parallel phase change memory.

Description

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Features

  • P8P Parallel Phase Change Memory (PCM) Features.
  • High-performance READ.
  • 115ns initial READ access.
  • 135ns initial READ access.
  • 25ns, 8-word asynchronous-page READ.
  • Architecture.
  • Asymmetrically blocked architecture.
  • Four 32KB parameter blocks with top or bottom configuration.
  • 128KB main blocks.
  • Serial peripheral interface (SPI) to enable lower pin count on-board programming.
  • Phase change memory (PCM).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP8P128A13BSM60E-Micron.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory (PCM) Features • High-performance READ – 115ns initial READ access – 135ns initial READ access – 25ns, 8-word asynchronous-page READ • Architecture – Asymmetrically blocked architecture – Four 32KB parameter blocks with top or bottom configuration – 128KB main blocks – Serial peripheral interface (SPI) to enable lower pin count on-board programming • Phase change memory (PCM) – Chalcogenide phase change storage element – Bit-alterable WRITE operation • Voltage and power – VCC (core) voltage: 2.7–3.6V – VCCQ (I/O) voltage: 1.7–3.
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