REVOLUTIONARY PINOUT 128K x 8 SRAM
• All I/O pins are SV tolerant
• High speed: IS, 20 and 2Sns
• Multiple center power and ground pins for greater
• Easy memory expansion with CE and OE options
• Automatic CE power down
• All inputs and outputs are TIL-compatible
• High-performance, low-power, CMOS double-metal
• Single 3.3V ±O.3V power supply
• Fast OE access times: 10 and 12ns
• Complies to JEDEC low-voltage TTL-standards
32-pin SOJ (400 mil)
32-pin TSOP (400 mil)
• 2V data retention
Commercial (O°C to +70°C)
Industrial (-40°C to +8S°C)
Automotive (-40°C to +12S°C)
Extended (-SSOC to +12S°C)
• Part Number Example: MTSLC128K8D4DJ-20
NOTE: Not all combinations of operating temperature, speed, data retention
and lowpower are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
128K X 8 SRAM
3.3V OPERATION WITH SINGLE CHIP
ENABLE, REVOLUTIONARY PINOUT
PIN ASSIGNMENT (Top View)
The MTSLC128K8D4 is organized as a 131,072 x 8 SRAM
using a fOUf-transistor memory cell with a high-speed, low-
power CMOS process. Micron SRAMs are fabricated using
double-layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, Micron
offers chip enable (CE) and output enable (OE) capability.
This enhancement can place the output in High-Z for
additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE) and chip enable inputs are both LOW. Reading
is accomplished when WE remains HIGH and CE goes
LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to achieve
their low standby power requirements.
All devices operate from a single +3.3V power supply
and all inputs and outputs are fully TTL-compatible and SV
tolerant. These low-voltage parts are ideal for mixed 3.3V
and SV systems.
Micron Semiconductor, tnc., reserves the right to change products or specifications without notice.
©1993, Micron Semiconductor, Inc.