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MT5C2568 - 32K x 8 SRAM

Description

The MT5C2568 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high-speed, low-power

Features

  • High speed: 10,12,15,20,25 and 35ns.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ±1O% power supply.
  • Easy memory expansion with CE and OE options.
  • All inputs and outputs are TTL-compatible.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM FEATURES • High speed: 10,12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±1O% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible OPTIONS • Timing IOns access 12ns access 15ns access 20ns access 25ns access 35ns access MARKING -10 -12 -15 -20 -25 -35 • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) None DJ • 2V data retention • Lowpower L P • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C2568DJ-20 IT NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available.
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