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MT5C2564 - 64K x 4 SRAM

Description

The MT5C2564 is organized as a 65,536 x 4 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS proc

Features

  • High speed: 10, 12, 15,20,25 and 35ns.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ±10% power supply.
  • Easy memory expansion with CE option.
  • All inputs and outputs are TTL-compatible.

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📁 Similar Datasheet

Part Number Description Manufacturer
MT5C2564 SRAM ASI
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MT5C2568 32K x 8 SRAM Micross
MT5C2568 32K x 8 SRAM Austin Semiconductor

Other Datasheets by Micron Technology

Part Number Description
MT5C2561 256K x 1 SRAM
MT5C2565 64K x 4 SRAM
MT5C2568 32K x 8 SRAM
MT5C256K16B2 256K x 16 SRAM
MT5C256K4A 256K x 4 SRAM

Full PDF Text Transcription

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SRAM FEATURES • High speed: 10, 12, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible OPTIONS • Timing IOns access 12ns access 15ns access 20ns access 25ns access 35ns access • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) MARKING -10 -12 -15 -20 -25 -35 None DJ • 2V data retention • Lowpower L P • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C2564DJ-35 L NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available.
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