MT5C2564
Description
The MT5C2564 is organized as a 65,536 x 4 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS proc.
Key Features
- High-performance, low-power, CMOS double-metal process
- Single +5V ±10% power supply
- Easy memory expansion with CE option
- All inputs and outputs are TTL-compatible OPTIONS
- Timing IOns access 12ns access 15ns access 20ns access 25ns access 35ns access
- Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) MARKING
- 2V data retention
- Lowpower L P
- Temperature mercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT
