• High speed: 10, 12, 15,20,25 and 35ns
• High-performance, low-power, CMOS double-metal
• Single +5V ±10% power supply
• Easy memory expansion with CE option
• All inputs and outputs are TTL-compatible
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention
Commercial (O°C to +70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
• Part Number Example: MT5C2564DJ-35 L
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contactthe factory for availabil-
ity of specific part number combinations.
The MT5C2564 is organized as a 65,536 x 4 SRAM using
a four-transistor memory cell with a high-speed, low-power
CMOS process. MicronSRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers chip enable (CE) with all organizations. This
enhancement can place the outputs in High-Z for addi-
tional flexibility in system design.
64Kx 4 SRAM
PIN ASSIGNMENT (Top View)
AD 1 '-../ 24 Vee
Al 23 A15
AD [ 1
Vss [ 12
Writing to these devices is accomplished when write
enable (WE) and CE inputs are both LOW. Reading is
accomplished when WE remains HIGH and CE goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designers to meet low standby
The "P" version provides a reduction in both operating
current (Icc) and TTL standby current (ISBl). The latter is
achieved through the use of gated inputs on the WE and
address lines, which also facilitates the design of battery
backed systems. That is, the gated inputs simplify the
design effort and circuitry required to protect against inad-
vertent battery current drain during power-down, when
inputs may be at undefined levels.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TIL-compatible.
Micron Semiconductor, Inc., reserves the righllo change products or specifications without notice.
©1993, Micron Semiconductor, Inc.