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MT5C1M4B2 - 1-Meg x 4 SRAM

General Description

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Key Features

  • High speed: 12, 15,20, 25 and 35ns.
  • High-performance, low-power, CMOS double-metal process.
  • Multiple center power and ground pins for improved noise immunity.
  • Single +5V ±10% power supply.
  • Easy memory expansion with CE and OE options.
  • All inputs and outputs are TIL-compatible.
  • Fast OE access time: 6, 8, 10, 12 and 15ns.

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Full PDF Text Transcription (Reference)

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ADVANCE SRAM FEATURES • High speed: 12, 15,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins for improved noise immunity • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TIL-compatible • Fast OE access time: 6, 8, 10, 12 and 15ns OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access 35ns access -12 -15 -20 -25 -35 • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) DJ TG • 2V data retention • Lowpower L P • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C1M4B2DJ-35 L NOTE: Not all combinations of operating temperature, sp