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Micron

MT5C1608 Datasheet Preview

MT5C1608 Datasheet

2K x 8 SRAM

No Preview Available !

SRAM
2Kx 8 SRAM
FEATURES
• High speed: 9, 10, 12, 15,20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V ±l0% power supply
• Easy memory expansion with CE and OE options
• All inputs and outputs are TTL-compatible
OPTIONS
• Timing
9ns access
IOns access
12ns access
15ns access
20ns access
25ns access
MARKING
-9
-10
-12
-15
-20
-25
• Packages
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
None
DJ
• 2V data retention
L
• Temperature
Commercial (O°C to +70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
None
IT
AT
XT
• Part Number Example: MT5C1608DJ-15 IT
NOTE: Not all combinations of operating temperature, speed, data retention
and low powerare necessarily available. Please contactthe factory for availabil-
ity of specific part number combinations.
PIN ASSIGNMENT (Top View)
24-Pin DIP
(SA-3)
A7 1 '-' 24 Vee
A6 2
23 AS
A5 3
22 A9
A4 4
21 WE
A3 5
20 OE
A2 6
19 A10
A1 7
18 CE
AO 8
17 DOB
D01 9
16 D07
DQ2 10
15 DOB
D03 11
14 DOS
Vss 12
13 DQ4
24-Pin SOJ
(SD-1)
A7 [ 1
A6 [ 2
A5 [ 3
A4[ 4
A3 [ 5
A2[ 6
A1 [ 7
AD [ 8
OQ1 [ 9
OQ2 [ 10
OQ3 [ 11
vss [ 12
24 IJvcc
23 pA8
22 pA9
21 pWE
20 pOE
19 pA1D
18 peE
17 POQ8
16 POQ7
15 POQ6
14 POQ5
13 pOQ4
U1
o<
!:i
en
:D
ls>:
GENERAL DESCRIPTION
The MT5C1608 is organized as a 2,048 x 8 SRAM using a
four-transistor memory cell with a high-speed, low-power
CMOS process. MicronSRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers chip enable (CE) and output enable (OE) with
this organization. This enhancement can place the outputs
in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE) and CE inputs are both LOW. Reading is
accomplished when WE remains HlGH and OE and CE
go LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to achieve
their low standby power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
MT5C1608
REV. 12/93
1-131
Micron Semiconductor, Inc., reserves the right to change products or speCifIcations without notice.
@1993,MlcronSemiconductor, Inc:.




Micron

MT5C1608 Datasheet Preview

MT5C1608 Datasheet

2K x 8 SRAM

No Preview Available !

UI
<
0
Ci
(J)
:»srJ:
A_
A_
A_
A_
A_
A_
A_
a:
W
0
0
0w
0
~
0a:
(LSB)
FUNCTIONAL BLOCK DIAGRAM
Vee GND
~~
16,384-BIT
MEMORY ARRAY
...J
0a:
zt-
0
0
~
COLUMN DECODER
(LSB)
POWER
t t t t DOWN
AAAA
' D08
, D01
CE
DE
WE
MT5C1608
REV. 12193
TRUTH TABLE
MODE
1lt IT WE
DQ
POWER
STANDBY
X H X HIGH-Z STANDBY
READ
L LH
0
ACTIVE
NOT SELECTED H L H HIGH-Z ACTIVE
WRITE
X L L D ACTIVE
1-132
Micron Semiconductor, Inc., reserves the right to change products or specifications without noticE
©1993, Micron Semiconductor,lm


Part Number MT5C1608
Description 2K x 8 SRAM
Maker Micron
PDF Download

MT5C1608 Datasheet PDF






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